美股详情

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2倍做多DRAM ETF-Defiance

9.32

-0.8930-8.75%

成交量：9.78万

成交额：91.64万

市值：1,323.01万

市盈率：- -

高：9.70

开：9.70

低：9.23

收：10.21

52周最高：25.52

52周最低：7.04

股本：142.00万

流通股本：142.00万

量比：1.28

换手率：6.89%

股息：- -

股息率：- -

净资产收益率：--

总资产收益率：--

市净率：--

市盈率(LYR):- -

数据加载中...

总览公司新闻资讯公告

消息称三星明年近80%的存储芯片产能已被长期供应协议锁定

南方两倍做多三星电子跌8.60%，南方东英最高2倍做多SK海力士跌10.06%。

中国长鑫存储披露下一代DRAM技术进展，三星、SK海力士盘中跌超4%

TradingKey中文

存储芯片利润狂飙，韩国股市为何先踩刹车？大摩揭秘超级周期的“股价拐点”

DUV光刻机榨到极限！长鑫G6内存面积再缩30%：键合工艺首次登场

港股异动丨外资出逃，三星、SK海力士下跌，港股做多产品开盘受挫

韩国综合股价指数下跌2％，至6492.44。SK海力士跌3.2%、三星电子跌1.9%。

长鑫存储称 4F² 结构取得关键进展，拟推服务器内存

长鑫取得重要突破！海外大厂业绩共振这9只超跌存储股频获机构调研(名单)

韩股跳水，跌幅扩大，三星电子跌0.95%，SK海力士跌2.8%，日股休市｜日韩股市

每日经济新闻

存储芯片红利消退，千亿美元外资加速撤离韩股

长鑫技术新突破，融合4F²架构等先进技术的DDR5 RDIMM产品预计年底亮相

长鑫技术新突破：4F²架构产品预计年底亮相

国产DRAM重大突破！长鑫4F²架构产品年底亮相：剑指服务器内存

读取吞吐狂飙452倍！全新CRAM内存压缩技术突破瓶颈：逼近原生DRAM

内存涨价下美国8月游戏硬件销量跌至13年同期最低

三星HBM，实现反超？

内存涨价下美国8月游戏硬件销量跌至13年同期最低

内存涨价下美国8月游戏硬件销量跌至13年同期最低

受内存、存储芯片短缺推高价格，游戏硬件销量跌至13年新低

环球市场播报

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11:55","pubTimestamp":1791777314,"startTime":"0","endTime":"0","summary":"快科技10月12日消息，据报道，国产DRAM厂商长鑫科技下一代内存技术平台G6的技术指标预测近日流出。该方案显示，长鑫将继续采用DUV光刻工艺生产G6代内存，预计最快于2028年推出，芯片单元面积将从G5代的0.00128205平方微米进一步缩减至0.000896平方微米，缩减幅度达30%。在缺乏EUV光刻机的条件下，长鑫正通过深度优化DUV工艺组合，逼近该技术的物理极限。键合工艺的首次引入是G6方案中最关键的技术变量。G6可能是6F内存芯片结构的最后一代产品。","market":"us","thumbnail":null,"type":0,"news_type":0,"thumbnails":[],"rights":null,"property":[],"language":"zh","translate_title":"","themeId":null,"theme_name":"","theme_type":"","isJumpTheme":false,"source_url":"https://tech.ifeng.com/c/8x9z1mqf0M5","is_publish_highlight":false,"source_rank":0,"column":"","sentiment":"0","news_top_title":null,"news_tag":"","news_rank":0,"length":0,"strategy_id":0,"source":"fenghuang_stock","symbols":["DRAM","DRAL","RAM","ASMG","RAMZ","ASMU","BK4588","ASMZ"],"isVideo":false,"video":null,"gpt_icon":0},{"id":"2674840008","title":"港股异动丨外资出逃，三星、SK海力士下跌，港股做多产品开盘受挫","url":"https://stock-news.laohu8.com/highlight/detail?id=2674840008","media":"中金财经","labels":[],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2674840008?lang=zh_cn&edition=fundamental","pubTime":"2026-10-12 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结构取得关键进展，拟推服务器内存","url":"https://stock-news.laohu8.com/highlight/detail?id=2674842093","media":"链捕手","labels":["productRelease"],"top":-1,"itemType":null,"share":"https://ttm.financial/m/news/2674842093?lang=zh_cn&edition=fundamental","pubTime":"2026-10-12 08:46","pubTimestamp":1791765973,"startTime":"0","endTime":"0","summary":" ChainCatcher 消息，中国存储芯片企业长鑫存储（CXMT）称，其在一种新存储结构上取得关键进展。三星电子与 SK 海力士也在推进同类结构，以提高存储密度。公司总裁曹侃宇在上海一场产业活动上表示，长鑫存储计划在 2026 年底前推出基于该结构的新服务器内存产品，相关说法来自公司声明。该结构为 4F² 设计，即每个存储单元占用面积为 4F²，其中 F 为半导体最小线宽。公司称，这一专有晶体管设计可通过在单颗芯片上容纳更多存储单元来提高存储密度，并改善效率。目前主流商用 DRAM 采用 6F² 单元结构。 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